Discrete Semiconductor Products

BYT62-TR

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DIODE AVAL 2.4KV 350MA SOD57

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Discrete Semiconductor Products

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DIODE AVAL 2.4KV 350MA SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BYT62-TR

Current - Average Rectified (Io)	350 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	5 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	2400 V
Voltage - Forward (Vf) (Max) @ If	3.6 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Reverse Recovery Time (trr)	Speed	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Technology	Operating Temperature - Junction [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division BYT62-TR	2400 V	350 mA	Through Hole	5 µs	Standard Recovery >500ns	200 mA	5 µA	3.6 V	Axial SOD-57	Avalanche	175 °C	SOD-57

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	25000	$ 0.49

General part information

Diode 2400 V 350mA Through Hole SOD-57

Technical documentation and resources