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Toshiba-RN2414(TE85L,F) Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
Discrete Semiconductor Products

1SS295(TE85L,F)

Active
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 0.03A 3-PIN S-MINI T/R

Toshiba-RN2414(TE85L,F) Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
Discrete Semiconductor Products

1SS295(TE85L,F)

Active
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 0.03A 3-PIN S-MINI T/R

Technical Specifications

Parameters and characteristics for this part

Specification1SS295(TE85L,F)
Capacitance0.9 pF
Current - Max30 mA
Diode Pair ConfigurationCommon Cathode
Diode Pair Count1
Diode TypeSchottky
Operating Temperature125 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSC-59-3
Voltage - Peak Reverse (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
ArrowN/A 5$ 0.4930d+
50$ 0.37
100$ 0.23
200$ 0.23
500$ 0.18

CAD

3D models and CAD resources for this part

Description

General part information

1SS295 Series

RF Diode Schottky - 1 Pair Common Cathode 4V 30 mA SC-59-3

Documents

Technical documentation and resources