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Toshiba-RN2414(TE85L,F) Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
Discrete Semiconductor Products

1SS295(TE85L,F)

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 0.03A 3-PIN S-MINI T/R

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Toshiba-RN2414(TE85L,F) Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
Discrete Semiconductor Products

1SS295(TE85L,F)

Active
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 0.03A 3-PIN S-MINI T/R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1SS295(TE85L,F)
Capacitance @ Vr, F0.9 pF
Current - Max [Max]30 mA
Diode TypeSchottky - 1 Pair Common Cathode
Operating Temperature125 ¯C
Package / CaseSOT-23-3, TO-236-3, SC-59
Supplier Device PackageSC-59-3
Voltage - Peak Reverse (Max) [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 5$ 0.49
50$ 0.37
100$ 0.23
200$ 0.23
500$ 0.18
DigikeyN/A 0$ 0.00

Description

General part information

1SS295 Series

RF Diode Schottky - 1 Pair Common Cathode 4V 30 mA SC-59-3

Documents

Technical documentation and resources