Discrete Semiconductor Products

MSJPF11N65A-BP

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N-CHANNEL MOSFET,TO-220F

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	MSJPF11N65A-BP

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	31.3 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type
Micro Commercial Components MSJPF11N65A-BP	21 nC	TO-220-3 Full Pack	30 V	-55 °C	150 °C	650 V	31.3 W	4 V	Through Hole	TO-220F	10 V	380 mOhm	11 A	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 11A 31.3W (Tc) Through Hole TO-220F

Technical documentation and resources