Discrete Semiconductor Products

ES2AHE3_A/I

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DIODE GEN PURP 50V 2A DO214AA

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Discrete Semiconductor Products

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DIODE GEN PURP 50V 2A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	ES2AHE3_A/I

Capacitance @ Vr, F	18 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Qualification	AEC-Q101
Reverse Recovery Time (trr)	20 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Supplier Device Package	Supplier Device Package	Capacitance @ Vr, F	Speed	Technology	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Grade
Vishay General Semiconductor - Diodes Division ES2A-E3/52T	50 V	2 A	900 mV	30 ns	SMB	DO-214AA	18 pF	200 mA 500 ns	Standard	DO-214AA SMB	Surface Mount	10 µA	150 °C	-55 °C
Vishay General Semiconductor - Diodes Division ES2AHE3_A/I	50 V	2 A	900 mV	20 ns	SMB	DO-214AA	18 pF	200 mA 500 ns	Standard	DO-214AA SMB	Surface Mount	10 µA	150 °C	-55 °C	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division ES2AHE3_A/H	50 V	2 A	900 mV	20 ns	SMB	DO-214AA	18 pF	200 mA 500 ns	Standard	DO-214AA SMB	Surface Mount	10 µA	150 °C	-55 °C	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 2A Surface Mount DO-214AA (SMB)

Technical documentation and resources