Specification	NTMJS1D15N03CGTWG

Current - Continuous Drain (Id) @ 25°C	257 A, 45 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	7300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	3.8 W, 125 W
Rds On (Max) @ Id, Vgs	1.15 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

NTMJS1D15N03CG Series

MOSFET, Power N Channel 30V LFPAK

Part	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type
ON Semiconductor NTMJS1D15N03CGTWG	MOSFET (Metal Oxide)	8-LFPAK	45 A 257 A	Surface Mount	2.2 V	94 nC	3.8 W 125 W	8-LFPAK56 SOT-1205	1.15 mOhm	20 V	7300 pF	-55 °C	175 ░C	10 V	30 V	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFET, Power N Channel 30V/±20V, 0.65mΩ, 410A, 188W, LFPAK 5x6mm

Technical documentation and resources