Specification	NTTFD4D1N03P1E

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	12 A, 54 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	14 nC
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1103 pF, 972 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-PowerWQFN
Power - Max	1 W, 20 W
Rds On (Max) @ Id, Vgs	4.3 mOhm, 3.5 mOhm
Supplier Device Package	12-WQFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

NTTFD4D1N03P1E Series

Dual Power MOSFETs, N-Channel, Symmetric, 3x3mm, 30V/4.5mΩ, 54A

Part	Configuration	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology
ON Semiconductor NTTFD4D1N03P1E	2 N-Channel (Dual)	3.5 mOhm 4.3 mOhm	12-PowerWQFN	30 V	12 A 54 A	14 nC	15 nC	-55 °C	150 °C	1 W 20 W	2.2 V	12-WQFN (3.3x3.3)	Surface Mount	972 pF 1103 pF	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.95
		10	$ 1.25
		100	$ 0.84
		500	$ 0.67
		1000	$ 0.61
	Digi-Reel®	1	$ 1.95
		10	$ 1.25
		100	$ 0.84
		500	$ 0.67
		1000	$ 0.61
	Tape & Reel (TR)	3000	$ 0.54
		6000	$ 0.52
Newark	Each (Supplied on Full Reel)	3000	$ 0.69
		6000	$ 0.63
		12000	$ 0.57
		18000	$ 0.55
		30000	$ 0.53
ON Semiconductor	N/A	1	$ 0.56

Description

General part information

NTTFD4D1N03P1E Series

Latest 30V Technology with lower Figure-of-Merit into lower paraistic inductance, higher power density package. Suitable for compact space required and high switching frequency DC to DC power converter application.