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CY7C1360S-166BZXI
Integrated Circuits (ICs)

R1Q3A7236ABB-33IA0

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Renesas Electronics Corporation

72-MBIT QDR™II SRAM 4-WORD BURST

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CY7C1360S-166BZXI
Integrated Circuits (ICs)

R1Q3A7236ABB-33IA0

Active
Renesas Electronics Corporation

72-MBIT QDR™II SRAM 4-WORD BURST

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationR1Q3A7236ABB-33IA0
Access Time450 ps
Clock Frequency300 MHz
Memory FormatSRAM
Memory InterfaceHSTL
Memory Organization [custom]36
Memory Organization [custom]2
Memory Size72 Gbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case165-LBGA
Supplier Device Package165-LBGA (13x15)
Voltage - Supply [Max]1.9 V
Voltage - Supply [Min]1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 8$ 38.55

Description

General part information

R1Q3A7236ABB-33I Series

The R1Q3A7236 is a 2, 097, 152-word by 36-bit and the R1Q3A7218 is a 4, 194, 304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

Documents

Technical documentation and resources