
R1Q3A7236ABB-33IA0
Active72-MBIT QDR™II SRAM 4-WORD BURST
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R1Q3A7236ABB-33IA0
Active72-MBIT QDR™II SRAM 4-WORD BURST
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R1Q3A7236ABB-33IA0 |
|---|---|
| Access Time | 450 ps |
| Clock Frequency | 300 MHz |
| Memory Format | SRAM |
| Memory Interface | HSTL |
| Memory Organization [custom] | 36 |
| Memory Organization [custom] | 2 |
| Memory Size | 72 Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-LBGA (13x15) |
| Voltage - Supply [Max] | 1.9 V |
| Voltage - Supply [Min] | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 8 | $ 38.55 | |
Description
General part information
R1Q3A7236ABB-33I Series
The R1Q3A7236 is a 2, 097, 152-word by 36-bit and the R1Q3A7218 is a 4, 194, 304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
Documents
Technical documentation and resources