Discrete Semiconductor Products

PHP34NQ11T,127

Obsolete

MOSFET N-CH 110V 35A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 110V 35A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP34NQ11T,127

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	110 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Input Capacitance (Ciss) (Max)	1700 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	136 W
Rds On (Max)	0.04 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Package Name	Gate Charge (Max)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Input Capacitance (Ciss) (Max)	Rds On (Max)	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
NXP USA Inc. PHP34NQ11T,127	TO-220AB	40 nC	20 V	TO-220-3	10 V	-55 °C	175 °C	N-Channel	MOSFET (Metal Oxide)	1700 pF	0.04 Ohm	4 V	Through Hole	35 A	110 V	136 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 110 V 35A (Tc) 136W (Tc) Through Hole TO-220AB

Technical documentation and resources