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Discrete Semiconductor Products

F1T7G

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Taiwan Semiconductor Corporation

500NS, 1A, 1000V, FAST RECOVERY RECTIFIER

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Symbol, Footprint, 3D Model
Discrete Semiconductor Products

F1T7G

Active
Taiwan Semiconductor Corporation

500NS, 1A, 1000V, FAST RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationF1T7G
Capacitance @ Vr, F15 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseT-18, Axial
Reverse Recovery Time (trr)500 ns
Speed200 mA, 500 ns
Supplier Device PackageTS-1
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.35
10$ 0.24
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
Tape & Reel (TR) 5000$ 0.06
10000$ 0.05
25000$ 0.05
50000$ 0.04
125000$ 0.04

Description

General part information

F1T7 Series

Diode 1000 V 1A Through Hole TS-1