Discrete Semiconductor Products

VS-60EPU02PBF

Obsolete

DIODE GP 200V 60A TO247AC

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Discrete Semiconductor Products

Obsolete

DIODE GP 200V 60A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-60EPU02PBF

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC Modified
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.08 V

Part	Speed	Current - Average Rectified (Io)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-60EPU02PBF	200 mA 500 ns	60 A	Standard	175 ░C	-55 C	Through Hole	35 ns	TO-247AC Modified	200 V	1.08 V	TO-247-2	50 µA
Vishay General Semiconductor - Diodes Division VS-60EPU02-N3	200 mA 500 ns	60 A	Standard	175 ░C	-55 C	Through Hole	28 ns	TO-247AC Modified	200 V	1.08 V	TO-247-2	50 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 60A Through Hole TO-247AC Modified

Technical documentation and resources

No documents available