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ONSEMI BZX79C6V2-T50R
Discrete Semiconductor Products

EGP30B

Active
ON Semiconductor

FAST / ULTRAFAST DIODE, 100 V, 3 A, SINGLE, 950 MV, 50 NS, 125 A

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ONSEMI BZX79C6V2-T50R
Discrete Semiconductor Products

EGP30B

Active
ON Semiconductor

FAST / ULTRAFAST DIODE, 100 V, 3 A, SINGLE, 950 MV, 50 NS, 125 A

Technical Specifications

Parameters and characteristics for this part

SpecificationEGP30B
Capacitance @ Vr, F95 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-201AD, Axial
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-201AD
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If [Max]950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

EGP30B Series

3.0A Ultra Fast Recovery Rectifier