
Discrete Semiconductor Products
EGP30B
ActiveON Semiconductor
FAST / ULTRAFAST DIODE, 100 V, 3 A, SINGLE, 950 MV, 50 NS, 125 A
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Discrete Semiconductor Products
EGP30B
ActiveON Semiconductor
FAST / ULTRAFAST DIODE, 100 V, 3 A, SINGLE, 950 MV, 50 NS, 125 A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | EGP30B |
|---|---|
| Capacitance @ Vr, F | 95 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-201AD, Axial |
| Reverse Recovery Time (trr) | 50 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | DO-201AD |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
EGP30B Series
3.0A Ultra Fast Recovery Rectifier
Documents
Technical documentation and resources