
NCV5183DR2G
ActiveANALOG / LINEAR ICS (S&D, NON STD., MPP) PART 1
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NCV5183DR2G
ActiveANALOG / LINEAR ICS (S&D, NON STD., MPP) PART 1
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NCV5183DR2G |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 4.3 A |
| Current - Peak Output (Source, Sink) [custom] | 4.3 A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Grade | Automotive |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 1.2 V, 2.5 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Qualification | AEC-Q100 |
| Rise / Fall Time (Typ) | 12 ns |
| Rise / Fall Time (Typ) | 12 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 18 V |
| Voltage - Supply [Min] | 9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.62 | |
| 10 | $ 2.35 | |||
| 25 | $ 2.22 | |||
| 100 | $ 1.78 | |||
| 250 | $ 1.56 | |||
| 500 | $ 1.51 | |||
| 1000 | $ 1.20 | |||
| Digi-Reel® | 1 | $ 2.62 | ||
| 10 | $ 2.35 | |||
| 25 | $ 2.22 | |||
| 100 | $ 1.78 | |||
| 250 | $ 1.56 | |||
| 500 | $ 1.51 | |||
| 1000 | $ 1.20 | |||
| Tape & Reel (TR) | 2500 | $ 1.16 | ||
| 5000 | $ 1.11 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.01 | |
| 10 | $ 2.05 | |||
| 25 | $ 1.88 | |||
| 50 | $ 1.76 | |||
| 100 | $ 1.62 | |||
| 250 | $ 1.42 | |||
| 500 | $ 1.31 | |||
| 1000 | $ 1.22 | |||
| ON Semiconductor | N/A | 1 | $ 1.01 | |
Description
General part information
NCP5183 Series
The NCP5183 is a High Voltage High Current Power MOSFET Driver providing two outputs for direct drive of 2 N−channel power MOSFETs arranged in a half−bridge (or any other high−side + low−side) configuration.It uses the bootstrap technique to insure a proper drive of the High−side power switch. The driver works with 2 independent inputs to accommodate any topology (including half−bridge, asymmetrical half−bridge, active clamp and full−bridge…).
Documents
Technical documentation and resources