Specification	R1Q4A7218ABB-33IA0

Access Time	450 ps
Clock Frequency	300 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	4 M
Memory Size	72 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	165-LBGA
Supplier Device Package	165-LBGA (13x15)
Technology	SRAM - Synchronous, DDR II
Voltage - Supply [Max]	1.9 V
Voltage - Supply [Min]	1.7 V

R1Q4A7218ABB-33I Series

72-Mbit DDRII SRAM 2-word Burst

Part	Technology	Memory Format	Clock Frequency	Access Time	Mounting Type	Memory Organization	Memory Type	Package / Case	Memory Size	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Interface	Operating Temperature [Max]	Operating Temperature [Min]
Renesas Electronics Corporation R1Q4A7218ABB-33IA0	SRAM - Synchronous DDR II	SRAM	300 MHz	450 ps	Surface Mount	4 M	Volatile	165-LBGA	72 Gbit	165-LBGA (13x15)	1.7 V	1.9 V	Parallel	85 C	-40 ¯C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2955	$ 131.05

Description

General part information

R1Q4A7218ABB-33I Series

The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

Documents

Technical documentation and resources

R1Q4A7236ABB,R1Q4A7218ABB Datasheet

Datasheet