Discrete Semiconductor Products

FDR6580

Obsolete

MOSFET N-CH 20V 11.2A SUPERSOT8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 11.2A SUPERSOT8

Technical Specifications

Parameters and characteristics for this part

Specification	FDR6580

Current - Continuous Drain (Id) @ 25°C	11.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	3829 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-LSOP
Package / Case [x]	0.13 in
Package / Case [x]	3.3 mm
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs [Max]	9 mOhm
Supplier Device Package	SuperSOT™-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [x]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
ON Semiconductor FDR6580	2.5 V 4.5 V	1.5 V	48 nC	1.8 W	9 mOhm	MOSFET (Metal Oxide)	8 V	Surface Mount	20 V	3829 pF	8-LSOP	0.13 in	3.3 mm	-55 °C	150 °C	N-Channel	11.2 A	SuperSOT™-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 11.2A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8

Technical documentation and resources

No documents available