Discrete Semiconductor Products
SCS212AJHRTLL
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 18 NC, TO-263AB
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Discrete Semiconductor Products
SCS212AJHRTLL
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 18 NC, TO-263AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCS212AJHRTLL |
|---|---|
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage @ Vr | 240 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-263AB |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.55 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCS212AJHR Series
Switching loss reduced, enabling high-speed switching. (4-pin package)
Documents
Technical documentation and resources