Discrete Semiconductor Products

AOT412

NRND

MOSFET N-CH 100V 8.2A/60A TO220

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Discrete Semiconductor Products

NRND

MOSFET N-CH 100V 8.2A/60A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT412

Current - Continuous Drain (Id) @ 25°C	8.2 A, 60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	7 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3220 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W, 2.6 W
Rds On (Max) @ Id, Vgs	15.8 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3.8 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AOT416	37 mOhm	4 V	4.7 A 42 A	MOSFET (Metal Oxide)	TO-220	7 V 10 V	N-Channel	1450 pF	175 °C	-55 °C	25 V	1.92 W 150 W	100 V	23 nC	Through Hole	TO-220-3
Alpha & Omega Semiconductor Inc. AOT412	15.8 mOhm	3.8 V	8.2 A 60 A	MOSFET (Metal Oxide)	TO-220	7 V 10 V	N-Channel	3220 pF	175 °C	-55 °C	25 V	2.6 W 150 W	100 V	54 nC	Through Hole	TO-220-3
Alpha & Omega Semiconductor Inc. AOT418L	10 mOhm	3.9 V	9.5 A 105 A	MOSFET (Metal Oxide)	TO-220	7 V 10 V	N-Channel		175 °C	-55 °C	25 V	2.1 W 333 W	100 V	83 nC	Through Hole	TO-220-3	5200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly