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SOT-963_527AD
Discrete Semiconductor Products

NSBA114YDP6T5G

Obsolete
ON Semiconductor

TRANS DIGITAL BJT PNP 50V 0.1A 408MW 6-PIN SOT-963 T/R

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SOT-963_527AD
Discrete Semiconductor Products

NSBA114YDP6T5G

Obsolete
ON Semiconductor

TRANS DIGITAL BJT PNP 50V 0.1A 408MW 6-PIN SOT-963 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationNSBA114YDP6T5G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Mounting TypeSurface Mount
Package / CaseSOT-963
Power - Max [Max]408 mW
Resistor - Emitter Base (R2)47000 Ohms
Supplier Device PackageSOT-963
Transistor Type2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 0.07

Description

General part information

NSBA114YDP6 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.