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Discrete Semiconductor Products

RD3R02BBHTL1

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Rohm Semiconductor

MOSFET, N-CH, 150V, 20A, TO-252 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsPart Explanation Package Dimensions +24

Product dimension image

Discrete Semiconductor Products

RD3R02BBHTL1

Active

Rohm Semiconductor

MOSFET, N-CH, 150V, 20A, TO-252 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsPart Explanation Package Dimensions +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RD3R02BBHTL1

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.4 nC
Input Capacitance (Ciss) (Max) @ Vds	730 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	81 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.73
		10	$ 1.43
		100	$ 1.14
		500	$ 0.96
		1000	$ 0.82
	Digi-Reel®	1	$ 1.73
		10	$ 1.43
		100	$ 1.14
		500	$ 0.96
		1000	$ 0.82
	Tape & Reel (TR)	2500	$ 0.78
		5000	$ 0.75
		12500	$ 0.72
Newark	Each (Supplied on Cut Tape)	1	$ 2.32
		10	$ 1.64
		25	$ 1.49
		50	$ 1.32
		100	$ 1.16
		250	$ 1.15
		500	$ 0.93
		1000	$ 0.86

Description

General part information

RD3R02BBH Series

RD3R02BBH is a power MOSFET with low on-resistance and high power package, suitable for switching.

Documents

Technical documentation and resources

Part Explanation

Application Note

Package Dimensions

Package Information

Types and Features of Transistors

Application Note

Measurement Method and Usage of Thermal Resistance RthJC

RD3R02BBH Data Sheet

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

What Is Thermal Design

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

RD3R02BBH ESD Data

Characteristics Data

Two-Resistor Model for Thermal Simulation

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Report of SVHC under REACH Regulation

Environmental Data

Method for Monitoring Switching Waveform

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Explanation for Marking

Package Information

List of Transistor Package Thermal Resistance

PCB Layout Thermal Design Guide

Moisture Sensitivity Level - Transistors

Package Information

About Export Regulations

Export Information

What is a Thermal Model? (Transistor)

About Flammability of Materials

Environmental Data

RD3R02BBH Series

Nch 150V 20A, TO-252 (DPAK), Power MOSFET

Part	FET Type	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Package / Case
Rohm Semiconductor RD3R02BBHTL1	N-Channel	MOSFET (Metal Oxide)	TO-252	730 pF	12.4 nC	150 V	50 W	81 mOhm	6 V 10 V	150 °C	20 A	Surface Mount	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3