Discrete Semiconductor Products

GBL10-E3/45

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BRIDGE RECT 1PHASE 1KV 3A GBL

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Discrete Semiconductor Products

Unknown

BRIDGE RECT 1PHASE 1KV 3A GBL

Technical Specifications

Parameters and characteristics for this part

Specification	GBL10-E3/45

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBL, 4-SIP
Supplier Device Package	GBL
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max) [Max]	1 kV

Part	Voltage - Peak Reverse (Max) [Max]	Current - Average Rectified (Io)	Technology	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Reverse Leakage @ Vr	Diode Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division GBL10-M3/45	1 kV	4 A	Standard	Through Hole	4-SIP GBL	150 °C	-55 °C	5 µA	Single Phase	GBL	1.1 V
Vishay General Semiconductor - Diodes Division GBL10-E3/45	1 kV	3 A	Standard	Through Hole	4-SIP GBL	150 °C	-55 °C	5 µA	Single Phase	GBL	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBL

Technical documentation and resources