Discrete Semiconductor Products

CDBT-54-G

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DIODE SCHOTTKY 30V 200MA SOT233

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY 30V 200MA SOT233

Technical Specifications

Parameters and characteristics for this part

Specification	CDBT-54-G

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	5 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOT-23-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io) (per Diode)	Speed	Speed	Current - Average Rectified (Io)	Capacitance @ Vr, F
Comchip Technology CDBT-54A-G	1 Pair Common Anode	1 V	SOT-23-3	SC-59 SOT-23-3 TO-236-3	5 ns	Schottky	2 µA	125 °C	30 V	Surface Mount	200 mA	Any Speed	200 mA
Comchip Technology CDBT-54-G		1 V	SOT-23-3	SC-59 SOT-23-3 TO-236-3	5 ns	Schottky	2 µA	125 °C	30 V	Surface Mount		Any Speed	200 mA	200 mA	10 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 200mA Surface Mount SOT-23-3

Technical documentation and resources