Discrete Semiconductor Products

NDDL01N60Z-1G

Obsolete

POWER MOSFET 600V 0.8A 15 OHM SINGLE N-CHANNEL DPAK

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Discrete Semiconductor Products

Obsolete

POWER MOSFET 600V 0.8A 15 OHM SINGLE N-CHANNEL DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	NDDL01N60Z-1G

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.9 nC
Input Capacitance (Ciss) (Max) @ Vds	92 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	26 W
Rds On (Max) @ Id, Vgs	15 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Power MOSFET 600V 0.8A 15 Ohm Single N-Channel DPAK

Part	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology
ON Semiconductor NDDL01N60ZT4G	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.9 nC	-55 °C	150 °C	26 W	30 V	DPAK	4.5 V	800 mA	10 V	15 Ohm	600 V	92 pF	Surface Mount	MOSFET (Metal Oxide)
ON Semiconductor NDDL01N60Z-1G	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	4.9 nC	-55 °C	150 °C	26 W	30 V	IPAK	4.5 V	800 mA	10 V	15 Ohm	600 V	92 pF	Through Hole	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 600V 0.8A 15 Ohm Single N-Channel DPAK

Technical documentation and resources