Discrete Semiconductor Products

FCA20N60-F109

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MOSFET N-CH 600V 20A TO3PN

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 20A TO3PN

Technical Specifications

Parameters and characteristics for this part

Specification	FCA20N60-F109

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC
Input Capacitance (Ciss) (Max) @ Vds	3080 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Discrete MOSFET

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Mounting Type	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor FCA20N60-F109	5 V	208 W	190 mOhm	3080 pF	10 V	TO-3PN	20 A	SC-65-3 TO-3P-3	N-Channel	Through Hole	MOSFET (Metal Oxide)	30 V	98 nC	-55 °C	150 °C	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.06
		10	$ 4.77
		100	$ 3.48
		500	$ 3.00
Newark	Each	250	$ 3.29
		500	$ 3.19
ON Semiconductor	N/A	1	$ 3.20

General part information

Discrete MOSFET

Technical documentation and resources