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8-PowerTDFN, 5 Leads
Discrete Semiconductor Products

NVMFWS1D9N08XT1G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 80V, 201 A, 1.9 MΩ

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8-PowerTDFN, 5 Leads
Discrete Semiconductor Products

NVMFWS1D9N08XT1G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 80V, 201 A, 1.9 MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFWS1D9N08XT1G
Current - Continuous Drain (Id) @ 25°C201 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]63 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds4470 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN, 5 Leads
Power Dissipation (Max)164 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.9 mOhm
Supplier Device Package4.9x5.9, 8-SOFL-WF, 5-DFNW
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.95
10$ 2.45
100$ 1.95
500$ 1.65
Digi-Reel® 1$ 2.95
10$ 2.45
100$ 1.95
500$ 1.65
Tape & Reel (TR) 1500$ 1.40
3000$ 1.33
7500$ 1.28
ON SemiconductorN/A 1$ 1.32

Description

General part information

NVMFWS1D9N08X Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.