Toshiba Semiconductor and Storage | | | | | | | | | | | | | | | | | | | | | |
Toshiba Semiconductor and Storage | 4-SMD | -55 C | 110 °C | Darlington | 1.25 V | 1.2 V | Surface Mount | 150 mA | 1000 % | 60 µs | 30 µs | 1 | 110 µs | 30 µs | DC | 4-SMD Gull Wing | 50 mA | 300 V | | | |
Toshiba Semiconductor and Storage | 4-SMD | -55 C | 110 °C | Darlington | 1.25 V | 1.2 V | Surface Mount | 150 mA | 1000 % | 60 µs | 30 µs | 1 | 110 µs | 30 µs | DC | 4-SMD Gull Wing | 50 mA | 300 V | | | |
Toshiba Semiconductor and Storage | 4-SMD | -55 C | 110 °C | Darlington | 1.25 V | 1.2 V | Surface Mount | 150 mA | 1000 % | 60 µs | 30 µs | 1 | 110 µs | 30 µs | DC | 4-SMD | 50 mA | 300 V | 0.3 in | 7.62 mm | |
Toshiba Semiconductor and Storage | 4-SMD | -55 C | 110 °C | Darlington | 1.25 V | 1.2 V | Surface Mount | 150 mA | 1000 % | 60 µs | 30 µs | 1 | 110 µs | 30 µs | DC | 4-SMD Gull Wing | 50 mA | 300 V | | | |
Toshiba Semiconductor and Storage | 4-SMD | -55 C | 110 °C | Darlington | 1.25 V | 1.2 V | Surface Mount | 150 mA | 1000 % | 60 µs | 30 µs | 1 | 110 µs | 30 µs | DC | 4-SMD | 50 mA | 300 V | 0.3 in | 7.62 mm | |
Toshiba Semiconductor and Storage | 4-DIP | -55 C | 110 °C | Darlington | 1.25 V | 1.2 V | Through Hole | 150 mA | 1000 % | 60 µs | 30 µs | 1 | 110 µs | 30 µs | DC | 4-DIP | 50 mA | 300 V | 7.62 mm | | 0.3 in |
Toshiba Semiconductor and Storage | 4-SMD | -55 C | 110 °C | Darlington | 1.25 V | 1.2 V | Surface Mount | 150 mA | 1000 % | 60 µs | 30 µs | 1 | 110 µs | 30 µs | DC | 4-SMD Gull Wing | 50 mA | 300 V | | | |
Toshiba Semiconductor and Storage | 4-SMD | -55 C | 110 °C | Darlington | 1.25 V | 1.2 V | Surface Mount | 150 mA | 1000 % | 60 µs | 30 µs | 1 | 110 µs | 30 µs | DC | 4-SMD Gull Wing | 50 mA | 300 V | | | |
Toshiba Semiconductor and Storage | | | | | | | | | | | | | | | | | | | | | |