Discrete Semiconductor Products

1N5554US

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DIODE GEN PURP 1KV 5A

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Discrete Semiconductor Products

Unknown

DIODE GEN PURP 1KV 5A

Technical Specifications

Parameters and characteristics for this part

Specification	1N5554US

Capacitance @ Vr, F	92 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Package / Case	SQ-MELF
Reverse Recovery Time (trr)	2 µs
Speed [Min]	200 mA, 500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Speed [Min]	Supplier Device Package	Qualification	Grade
Semtech Corporation 1N5554US	1 V	SQ-MELF	2 µs	5 A	92 pF	1000 V	1 µA	Standard	Surface Mount	200 mA 500 ns
Semtech Corporation 1N5554C.TR	1 V	Axial	2 µs	5 A	92 pF	1000 V	1 µA	Standard	Through Hole	200 mA 500 ns	Axial
Semtech Corporation JANTX1N5554	1 V	Axial	2 µs	5 A	92 pF	1000 V	1 µA	Standard	Through Hole	200 mA 500 ns	Axial	MIL-PRF-19500/420	Military
Semtech Corporation 1N5554	1 V	Axial	2 µs	5 A	92 pF	1000 V	1 µA	Standard	Through Hole	200 mA 500 ns	Axial

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 5A Surface Mount

Technical documentation and resources

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