Discrete Semiconductor Products

BAV303-TR

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DIODE GP 200V 250MA MICROMELF

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Discrete Semiconductor Products

Active

DIODE GP 200V 250MA MICROMELF

Technical Specifications

Parameters and characteristics for this part

Specification	BAV303-TR

Capacitance @ Vr, F	1.5 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	100 nA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Package / Case	2-SMD, No Lead
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	MicroMelf
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Technology	Mounting Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Qualification	Speed	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Grade
Vishay General Semiconductor - Diodes Division BAV303-TR	175 ░C	1.5 pF	Standard	Surface Mount	250 mA	1 V	200 V	50 ns	AEC-Q101	200 mA 500 ns	100 nA	2-SMD No Lead	MicroMelf	Automotive

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General part information

Diode 200 V 250mA Surface Mount MicroMELF

Technical documentation and resources