Discrete Semiconductor Products

BF421ZL1

Obsolete

SILICON PLASTIC TRANSISTOR

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Discrete Semiconductor Products

Obsolete

SILICON PLASTIC TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BF421ZL1

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	60 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

Silicon Plastic Transistor

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package	Frequency - Transition	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type
ON Semiconductor BF421ZL1	-55 °C	150 °C	TO-92	TO-226	60 MHz	Formed Leads TO-226-3 TO-92-3 Long Body	50 hFE	0.01 µA	50 mA	300 V	500 mV	PNP	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This High Voltage PNP Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the TO-92 package.

Technical documentation and resources