Discrete Semiconductor Products

SSM6N357R,LF

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 60 V, 0.65 A, 1.8 Ω@5V, TSOP6F

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 60 V, 0.65 A, 1.8 Ω@5V, TSOP6F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N357R,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	650 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	60 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	1.8 Ohm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Power - Max [Max]	Configuration
Toshiba Semiconductor and Storage SSM6N357R,LF	MOSFET (Metal Oxide)	650 mA	1.5 nC	2 V	Surface Mount	6-SMD Flat Leads	60 pF	1.8 Ohm	6-TSOP-F	60 V	150 °C	1.5 W	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 650mA (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F

Technical documentation and resources