Discrete Semiconductor Products

PSMB032N08NS1_R2_00601

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80V/ 3.4MOHM / MV MOSFET

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Discrete Semiconductor Products

Active

80V/ 3.4MOHM / MV MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PSMB032N08NS1_R2_00601

Current - Continuous Drain (Id) @ 25°C	161 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	7 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	76 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.75 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Vgs(th) (Max) @ Id
Panjit International Inc. PSMB032N08NS1_R2_00601	80 V	76 nC	20 V	MOSFET (Metal Oxide)	7430 pF	TO-263	150 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.4 mOhm	156 W	7 V 10 V	161 A	N-Channel	Surface Mount	3.75 V

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General part information

N-Channel 80 V 161A (Tc) 156W (Tc) Surface Mount TO-263

Technical documentation and resources