Discrete Semiconductor Products

SQM120N10-09_GE3

Active

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 120A TO263

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

SQM120N10-09_GE3

Active

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 120A TO263

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SQM120N10-09_GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	8645 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

SQM120 Series

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SQM120N03-1M5L_GE3	2.5 V	15605 pF	30 V	N-Channel	270 nC	Surface Mount	-55 °C	175 ░C	375 W	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.5 mOhm	TO-263	MOSFET (Metal Oxide)	20 V	4.5 V 10 V
Vishay General Semiconductor - Diodes Division SQM120N10-3M8_GE3	3.5 V		100 V	N-Channel		Surface Mount	-55 °C	175 ░C	375 W	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.8 mOhm	TO-263 (D2PAK)	MOSFET (Metal Oxide)	20 V	10 V	AEC-Q101	7230 pF	Automotive	190 nC
Vishay General Semiconductor - Diodes Division SQM120P06-07L_GE3	2.5 V		60 V	P-Channel	270 nC	Surface Mount	-55 °C	175 ░C	375 W	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6.7 mOhm	TO-263 (D2PAK)	MOSFET (Metal Oxide)	20 V	4.5 V 10 V		14280 pF
Vishay General Semiconductor - Diodes Division SQM120P04-04L_GE3	2.5 V		40 V	P-Channel	330 nC	Surface Mount	-55 °C	175 ░C	375 W	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 mOhm	TO-263 (D2PAK)	MOSFET (Metal Oxide)	20 V	4.5 V 10 V	AEC-Q101	13980 pF	Automotive
Vishay General Semiconductor - Diodes Division SQM120P10_10M1LGE3	2.5 V		100 V	P-Channel		Surface Mount	-55 °C	175 ░C	375 W	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10.1 mOhm	TO-263 (D2PAK)	MOSFET (Metal Oxide)	20 V	4.5 V 10 V	AEC-Q101	9000 pF	Automotive	190 nC
Vishay General Semiconductor - Diodes Division SQM120N10-09_GE3	3.5 V		100 V	N-Channel	180 nC	Surface Mount	-55 °C	175 ░C	375 W	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	9.5 mOhm	TO-263 (D2PAK)	MOSFET (Metal Oxide)	20 V	10 V	AEC-Q101	8645 pF	Automotive
Vishay General Semiconductor - Diodes Division SQM120N02-1M3L_GE3	2.5 V		20 V	N-Channel	290 nC	Surface Mount	-55 °C	175 ░C	375 W	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.3 mOhm	TO-263 (D2PAK)	MOSFET (Metal Oxide)	20 V	4.5 V 10 V	AEC-Q101	14500 pF	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	800	$ 1.81
		1600	$ 1.55
		2400	$ 1.46
		5600	$ 1.40

Description

General part information

SQM120 Series

N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources