Discrete Semiconductor Products

MDD200-18N1

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DIODE MODULE GP 1800V 224A Y4-M6

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Discrete Semiconductor Products

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DIODE MODULE GP 1800V 224A Y4-M6

Technical Specifications

Parameters and characteristics for this part

Specification	MDD200-18N1

Current - Average Rectified (Io) (per Diode)	224 A
Current - Reverse Leakage @ Vr	20 mA, 1800 V
Diode Configuration	1 Pair Series Connection
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Y4-M6
Speed [Min]	200 mA, 500 ns
Supplier Device Package	Y4-M6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Bipolar Module - Diode Y4-M5/6

Part	Diode Configuration	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io) (per Diode)	Speed [Min]	Package / Case
LITTELFUSE MDD200-18N1	1 Pair Series Connection	-40 °C	150 °C	Y4-M6	20 mA 1800 V	1.3 V	Chassis Mount	1800 V	Standard	224 A	200 mA 500 ns	Y4-M6

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General part information

Bipolar Module - Diode Y4-M5/6

Technical documentation and resources