Specification	CSD17313Q2Q1T

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	3 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2.4 W, 17 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	6-WSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.8 V

CSD17313Q2Q1 Series

Automotive 30-V N channel NexFET™ power MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD17313Q2Q1T	2.7 nC	N-Channel	1.8 V	10 V	-8 V	2.4 W 17 W	8 V	3 V	-55 °C	150 °C	30 mOhm	Surface Mount	6-WSON (2x2)	340 pF	30 V	MOSFET (Metal Oxide)	5 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

LCSC	Piece	1	$ 0.74
		250	$ 0.29
		500	$ 0.28
		1000	$ 0.27

Description

General part information

CSD17313Q2Q1 Series

This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Documents

Technical documentation and resources

CSD17313Q2Q1 30-V N-Channel NexFET™ Power MOSFET datasheet (Rev. D)

Data sheet