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16-SOIC
Discrete Semiconductor Products

HFA3127BZ

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Renesas Electronics Corporation

ULTRA HIGH FREQUENCY TRANSISTOR ARRAYS

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16-SOIC
Discrete Semiconductor Products

HFA3127BZ

Active
Renesas Electronics Corporation

ULTRA HIGH FREQUENCY TRANSISTOR ARRAYS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHFA3127BZ
Current - Collector (Ic) (Max) [Max]65 mA
DC Current Gain (hFE) (Min) @ Ic, Vce40 hFE
Frequency - Transition8 GHz
Mounting TypeSurface Mount
Noise Figure (dB Typ @ f)3.5 dB
Operating Temperature150 °C
Package / Case16-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Supplier Device Package16-SOIC
Transistor Type5 NPN
Voltage - Collector Emitter Breakdown (Max)12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 12.37
10$ 10.89
480$ 8.54
960$ 7.83

Description

General part information

HFA3127 Series

The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fTof 8GHz while the PNP transistors provide a fTof 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.

Documents

Technical documentation and resources