Discrete Semiconductor Products

EMD9-TP

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INTERFACE

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Discrete Semiconductor Products

Active

INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	EMD9-TP

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	68
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Supplier Device Package	SOT-563
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Package / Case	Frequency - Transition
Micro Commercial Components EMD9-TP	68	100 mA	Surface Mount	50 V	300 mV	SOT-563	500 nA	SOT-563 SOT-666	250 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 0.11

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount SOT-563

Technical documentation and resources