Specification	FDD3672-F085

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1635 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	144 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	47 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDD3672_F085 Series

N-Channel UltraFET® Trench MOSFET, 100V, 44A, 28mΩ

Part	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Grade	Qualification
ON Semiconductor FDD3672	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	36 nC	135 W	6.5 A 44 A	100 V	-55 °C	175 ░C	1710 pF	TO-252AA	Surface Mount	28 mOhm	4 V	N-Channel	6 V 10 V	MOSFET (Metal Oxide)
ON Semiconductor FDD3672-F085	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	36 nC	144 W	44 A	100 V	-55 °C	175 ░C	1635 pF	TO-252AA	Surface Mount	47 mOhm	4 V	N-Channel	6 V 10 V	MOSFET (Metal Oxide)	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDD3672_F085 Series

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.