Discrete Semiconductor Products

SI1972DH-T1-GE3

Obsolete

MOSFET 2N-CH 30V 1.3A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 1.3A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1972DH-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	2.8 nC
Input Capacitance (Ciss) (Max) @ Vds	75 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs [Max]	225 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.8 V

Part	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Drain to Source Voltage (Vdss)	Configuration	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI1972DH-T1-GE3	225 mOhm	1.3 A	1.25 W	30 V	2 N-Channel (Dual)	2.8 V	6-TSSOP SC-88 SOT-363	75 pF	SC-70-6	MOSFET (Metal Oxide)	2.8 nC	Surface Mount	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 1.3A 1.25W Surface Mount SC-70-6

Technical documentation and resources

No documents available