Discrete Semiconductor Products

SKP202VR

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MOSFET N-CH 200V 45A TO263-3

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Discrete Semiconductor Products

Active

MOSFET N-CH 200V 45A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SKP202VR

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	2000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	95 W
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs (Max)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Sanken Electric USA Inc. SKP202VR	95 W	MOSFET (Metal Oxide)	200 V	4.5 V	N-Channel	2000 pF	Surface Mount	30 V	150 °C	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263	45 A	53 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.68

General part information

N-Channel 200 V 45A (Ta) 95W (Tc) Surface Mount TO-263

Technical documentation and resources