Discrete Semiconductor Products

UPA2792AGR-E1-AT

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

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Discrete Semiconductor Products

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2792AGR-E1-AT

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerSOIC (0.173", 4.40mm Width)
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	12.5 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)

Part	Operating Temperature	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Drain to Source Voltage (Vdss)	Mounting Type	FET Feature	Supplier Device Package
Renesas Electronics Corporation UPA2792AGR-E1-AT	150 °C	2 W	10 A	12.5 mOhm	2200 pF	8-PowerSOIC (0.173" 4.40mm Width)	MOSFET (Metal Oxide)	42 nC	N and P-Channel	30 V	Surface Mount	Logic Level Gate	8-SOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The UPA2792AGR is a Switching N-Channel Power MOSFET.

Technical documentation and resources