Discrete Semiconductor Products

UPA2792AGR-E1-AT

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2792AGR-E1-AT

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerSOIC
Package / Case [custom]	0.173 in
Package / Case [custom]	4.4 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	12.5 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)

Switching N-Channel Power MOSFET

Part	Configuration	Supplier Device Package	FET Feature	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Mounting Type	Package / Case [custom]	Package / Case [custom]	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation UPA2792AGR-E1-AT	N and P-Channel	8-SOP	Logic Level Gate	MOSFET (Metal Oxide)	30 V	10 A	2 W	Surface Mount	0.173 in	4.4 mm	8-PowerSOIC	12.5 mOhm	150 °C	42 nC	2200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	281	$ 1.07

General part information

The UPA2792AGR is a Switching N-Channel Power MOSFET.

Technical documentation and resources