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DCG010-TL-E
Discrete Semiconductor Products

MSB92AWT1

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ON Semiconductor

HIGH VOLTAGE PNP BIPOLAR TRANSISTOR

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DCG010-TL-E
Discrete Semiconductor Products

MSB92AWT1

Active
ON Semiconductor

HIGH VOLTAGE PNP BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationMSB92AWT1
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]250 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120 hFE
Frequency - Transition50 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-70, SOT-323
Power - Max [Max]150 mW
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max)300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 6662$ 0.05

Description

General part information

MSB92AW Series

This High Voltage PNP Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70 package, which is designed for low power surface mount applications.