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Technical Specifications
Parameters and characteristics for this part
| Specification | EMF17T2R |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA, 150 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180, 20 |
| Frequency - Transition | 140 MHz, 250 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-666, SOT-563 |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Supplier Device Package | EMT6 |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 300 mV, 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 8000 | $ 0.10 | |
| 16000 | $ 0.09 | |||
| 24000 | $ 0.09 | |||
| 40000 | $ 0.08 | |||
| 56000 | $ 0.08 | |||
| 80000 | $ 0.08 | |||
Description
General part information
EMF17 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA, 150mA 250MHz, 140MHz 150mW Surface Mount EMT6
Documents
Technical documentation and resources
No documents available