Discrete Semiconductor Products

SQD40131EL_GE3

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TRANS MOSFET P-CH 40V 50A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) DPAK

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Discrete Semiconductor Products

Active

TRANS MOSFET P-CH 40V 50A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SQD40131EL_GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	115 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	62 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	11.5 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Qualification	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Grade	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SQD40131EL_GE3	P-Channel	6600 pF	Surface Mount	AEC-Q101	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	115 nC	2.5 V	Automotive	MOSFET (Metal Oxide)	11.5 mOhm	-55 °C	175 ░C	50 A	4.5 V 10 V	TO-252AA	20 V	62 W

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General part information

P-Channel 40 V 50A (Tc) 62W (Tc) Surface Mount TO-252AA

Technical documentation and resources