Specification	MBR20100CTTU

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	800 mV

MBR20100CT Series

100 V, 20 A Schottky Rectifier

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Diode Configuration	Technology	Current - Average Rectified (Io) (per Diode)	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor MBR20100CTG	200 mA 500 ns	100 V	TO-220-3	175 ░C	-65 C	850 mV	TO-220	1 Pair Common Cathode	Schottky	10 A	Through Hole	100 µA
ON Semiconductor MBR20100CTTU	200 mA 500 ns	100 V	TO-220-3				TO-220-3	1 Pair Common Cathode	Schottky	10 A	Through Hole	200 µA	150 °C	800 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal.