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FL06500A
Discrete Semiconductor Products

FL06150A

Active
fastSiC

SICFET N-CH 650V 15A TO-252

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FL06500A
Discrete Semiconductor Products

FL06150A

Active
fastSiC

SICFET N-CH 650V 15A TO-252

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFL06150A
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]672 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)68 W
Supplier Device PackageTO-252
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
0$ 0.00
Tape & Reel (TR) 1$ 4.72
1$ 4.72
10$ 1.73
10$ 1.73
100$ 1.61
100$ 1.61
3000$ 1.57
3000$ 1.57

Description

General part information

FL06150A

N-Channel 650 V 15A (Tc) 68W (Tc) Surface Mount TO-252

Documents

Technical documentation and resources