Discrete Semiconductor Products

SI4864DY-T1-GE3

LTB

MOSFET N-CH 20V 17A 8SO

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Discrete Semiconductor Products

LTB

MOSFET N-CH 20V 17A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4864DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type
Vishay General Semiconductor - Diodes Division SI4864DY-T1-GE3	70 nC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	3.5 mOhm	2.5 V 4.5 V	20 V	2 V	8-SOIC	N-Channel	17 A	-55 °C	150 °C	8 V	Surface Mount

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General part information

N-Channel 20 V 17A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

Technical documentation and resources