IXFN132N50P3
ActiveDISCMSFT NCHHIPERFETPOLAR3 SOT-227B(MINI
Deep-Dive with AI
Search across all available documentation for this part.
IXFN132N50P3
ActiveDISCMSFT NCHHIPERFETPOLAR3 SOT-227B(MINI
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN132N50P3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 112 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 18600 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 1500 W |
| Rds On (Max) @ Id, Vgs | 39 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 41.86 | |
| 10 | $ 37.30 | |||
| 100 | $ 32.74 | |||
Description
General part information
IXFN132N50P3 Series
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings
Documents
Technical documentation and resources