Discrete Semiconductor Products

RJP4010AGE-00#P5

LTB

400V, 150A, IGBT FOR STROBE FLASH

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Discrete Semiconductor Products

LTB

400V, 150A, IGBT FOR STROBE FLASH

Technical Specifications

Parameters and characteristics for this part

Specification	RJP4010AGE-00#P5

Current - Collector Pulsed (Icm)	150 A
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-TSSOJ
Package / Case	0.094 "
Package / Case [custom]	2.4 mm
Power - Max [Max]	1.6 W
Supplier Device Package	8-TSOJ
Vce(on) (Max) @ Vge, Ic	9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

400V, 150A, IGBT for Strobe Flash

Part	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Package / Case [custom]	Package / Case	Package / Case
Renesas Electronics Corporation RJP4010AGE-00#P5	1.6 W	-40 °C	150 °C	150 A	Surface Mount	8-TSOJ	400 V	9 V	2.4 mm	8-TSSOJ	0.094 "

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The RJP4010AGE 400V, 150A strobe insulated-gate bipolar transistor (IGBT) is available in an ultra-small TSOJ-8 package.

Technical documentation and resources