Discrete Semiconductor Products

SQP10250E_GE3

Obsolete

MOSFET N-CH 250V 53A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 250V 53A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SQP10250E_GE3

Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4050 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	250 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	FET Type	Qualification	Supplier Device Package	Grade	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SQP10250E_GE3	53 A	TO-220-3	75 nC	Through Hole	4050 pF	10 V	7.5 V	30 mOhm	N-Channel	AEC-Q101	TO-220AB	Automotive	MOSFET (Metal Oxide)	250 W	3.5 V	250 V	-55 °C	175 ░C	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 53A (Tc) 250W (Tc) Through Hole TO-220AB

Technical documentation and resources