Discrete Semiconductor Products

IRF630B_FP001

Obsolete

MOSFET N-CH 200V 9A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 9A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRF630B_FP001

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	72 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)	Supplier Device Package	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor IRF630B_FP001	Through Hole	MOSFET (Metal Oxide)	400 mOhm	72 W	30 V	TO-220-3	TO-220-3	N-Channel	200 V	9 A	29 nC	4 V	-55 °C	150 °C	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 9A (Tc) 72W (Tc) Through Hole TO-220-3

Technical documentation and resources