Discrete Semiconductor Products

UGF8DT-E3/45

Obsolete

DIODE GEN PURP 200V 8A ITO220AC

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DocumentsIRLZ44

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 8A ITO220AC

DocumentsIRLZ44

Technical Specifications

Parameters and characteristics for this part

Specification	UGF8DT-E3/45

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Speed
Vishay General Semiconductor - Diodes Division UGF8JT-E3/45	600 V	TO-220-2 Full Pack Isolated Tab	30 µA	50 ns	8 A	ITO-220AC	150 °C	-55 °C	Through Hole	1.75 V	Standard	200 mA 500 ns
Vishay General Semiconductor - Diodes Division UGF8DT-E3/45	200 V	TO-220-2 Full Pack Isolated Tab	10 µA	30 ns	8 A	ITO-220AC	150 °C	-55 °C	Through Hole		Standard	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 8A Through Hole ITO-220AC

Technical documentation and resources