Discrete Semiconductor Products

PCDP08120G1_T0_00001

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TO-220AC, SIC

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Discrete Semiconductor Products

Active

TO-220AC, SIC

Technical Specifications

Parameters and characteristics for this part

Specification	PCDP08120G1_T0_00001

Capacitance @ Vr, F	418 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Supplier Device Package	Current - Average Rectified (Io)	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology
Panjit International Inc. PCDP08120G1_T0_00001	TO-220-2	418 pF	60 µA	0 ns	TO-220AC	8 A	No Recovery Time	Through Hole	1.2 kV	1.7 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 8A Through Hole TO-220AC

Technical documentation and resources

No documents available